any changing of specification will not be informed individual PZT359 pnp silicon planar h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e f e a t u r e s e x c e l l e n t g a i n c h a r a c t e r i s t i c s p e c i f i e d u p t o 1 0 a m p s . 5 a m p s c o n t i n u o u s c u r r e n t , u p t o 1 0 a m p p e a k c u r r e n t . v e r y l o w s a t u r a t i o n v o l t a g e m e c h a n i c a l d a t a c a s e : s o t - 2 2 3 p l a s t i c p a c k a g e w e i g h t : a p p r o x . 0 . 0 2 1 g m a r k i n g c o d e : 3 5 9 x x x x ( x x x x = d a t e c o d e ) r o h s c o m p l i a n t p r o d u c t 01-jun-2002 rev. a page 1 of 2 electrical characteristics parameter symbol min t yp. max uni test conditions collector- base breakdown voltage bv cbo -140 - - v i c =-100 a, i e =0 collector- emitter breakdown voltage (w/ real device limit) bv cer -140 - - v i c =-1 a, r b <=1k collector- emitter breakdown voltage *bv ceo -100 - - v i c =-10ma, i b =0 emitter-base breakdown voltage bv ebo -6 - - v i e =-100 a, i c =0 collector- base cutoff current i cbo ---50nav cb =-100v, i e =0 collector- base cutoff current (w/ real device limit) i cer ---50na v cb =-100v, r<=1k emitter-base cutoff current i ebo ---10nav eb =-6v, i c =0 collector saturation voltage 1 *v ce (sat)1 - -20 -50 mv i c =-100ma, i b =-10ma collector saturation voltage 2 *v ce (sat)2 - -90 -115 mv i c =-1a, i b =-100ma collector saturation voltage 3 *v ce (sat)3 - -160 -220 mv i c =-2a, i b =-200ma collector saturation voltage 4 *v ce (sat)4 - -300 -420 mv i c =-4a, i b =-400ma base saturation voltage *v be (sat) - - 1.01 -1.17 v i c =-4a, i b =-400ma base- emitter voltage *v be (on) - -0.925 - 1.16 v v ce =-1v, i c =-4a dc current gain 1 *h fe 1 100 200 - v ce =-1v, i c =-10ma dc current gain 2 *h fe 2 100 200 300 v ce =-1v, i c =-1a dc current gain 3 *h fe 35090 - v ce =-1v, i c =-3a dc current gain 4 *h fe 43050 - v ce =-1v, i c =- 4 a dc current gain 5 *h fe 515-v ce =-1v, i c =-10a gain-bandwidth product ft - - 125 - mhz v ce =-10v, i c =-100ma, f=50mhz (t j =25 o c , unless otherwise noted) high current transistor b c e c sot-223 f f f f e e f e f e e f 5 5 f e 123 1. base maxim junction temperature um ratings and thermal characteristics parameter symbol value unit collector-emitter voltage v ceo -100 v collector-base voltage v cbo -140 v emitter-base voltage v ebo -6 v collector current (dc) i c -5 total po w er dissipation p d w 3 storage temperature tstg -55 to +150 *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 square inch minimum. a a collector current (pulse) i c -10 (t a = 25 o c, unless otherwise noted) 2. collector 3. emitter t j +150 o c o c 1.6 f 2
any changing of specification will not be informed individual PZT359 pnp silicon planar o output capacitance c ob n-time t on - off-time toff - - - 46 110 65 0 - - ns pf v v cb =-10v, i e =0, f=1mhz cc =-10v, i c =2a, i b1 =-200ma,i b1 =200ma 01-jun-2002 rev. a page 2 of 2 http://www.secosgmbh.com etoche eemete hh cet to *measured under pulse condition. pulse width 300 s, duty cycle 2% spice parameter data is available upon request for this device.
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